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| NTE2300 Silicon NPN Transistor High Voltage, Horizontal Output Description: The NTE2300 is a silicon NPN transistor in a TO3P type package designed for use in large screen color TV deflection circuits. Features: D High Breakdown Voltage and High Reliability D High Switching Speed Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16A Collector Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Electrical Charactertistics: (TA = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Current-Gain Bandwidth Product Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Fall Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) Test Conditions VCB = 800V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 1A VCE = 10V, IC = 1A IC = 4A, IB = 0.8A IC = 4A, IB = 0.8A Min - - 8 - - - 1500 800 7 - Typ - - - 3 - - - - - - Max 10 1 - - 5.0 1.5 - - - 0.4 MHz V V V V V s Unit A mA V(BR)CBO IC = 5mA, IE = 0 V(BR)CEO IC = 100mA, RBE = V(BR)EBO IE = 200mA, IC = 0 tf IC = 4A, IB1 = 0.8A, IB2 = -1.6A .190 (4.82) .615 (15.62) C .787 (20.0) .591 (15.02) .126 (3.22) Dia .787 (20.0) B C E .215 (5.47) |
Price & Availability of NTE2300
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